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                                MBT3904DW1T1G
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                                                                    Bipolar Transistors - BJT

onsemi FUXINSEMI

Manufacturer:

onsemi

Mfr.Part #:

MBT3904DW1T1G

Package:

SOT-363

RoHS:
Datasheet:

MBT3904DW1T1G

Description:

40V 200mW 300@10mA,1V 200mA 2 NPN SOT-363 Bipolar Transistors - BJT ROHS

ECAD Model:
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Manufacturer,Packaging,Package / Case,Collector Cut-Off Current (Icbo),安装类型,二极管配置,特性,Package/Enclosure,正向电流,Forward Voltage (Vf@If),Collector-Emitter Breakdown Voltage (Vceo),封装/外壳,是否无铅,集电极电流Ic(最大值),输出配置,Reverse Leakage Current,击穿电压,Power Dissipation (Pd),品牌,电流-集电极截止(最大值),最大耗散功率,电源抑制比(PSRR),电压-集射极击穿(最大值),集电极-基极电压(VCBO),Reverse Recovery Time (trr),湿气敏感性等级 (MSL),Vce饱和值,DC Current Gain (hFE@Ic,Vce),原始制造商,工作温度,阈值电压Vgs(th),稳压值Vz,总电容C,输出电压(最大值),Diode Configuration,阈值电压,Collector Current (Ic),反向耐压VR(max),正向压降VF,集电极电流 Ic,反向击穿电压,无卤,增益,Average Rectified Current (Io),Transition Frequency (fT),包装,功率耗散,额定功率,漏源电压(Vdss),基射极电阻(R2),输入电压,压差,Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib),反向漏电流IR,极性,集电极与基极之间电压 VCBO,连续漏极电流Id@25℃,输出端数,正向压降VF Min,Vce饱和压降,Reverse Voltage (Vr),Transistor Type,集射极击穿电压Vce(Max),集电极-发射极击穿电压,印字代码,漏源击穿电压BVDSS,Operating Temperature,DC电流增益(hFE)(Min&Range),连续漏极电流,平均整流电流IF,跃迁频率,存储温度,DC正向电流(If),Vce饱和值(最大值),输出类型,结电容Cj,反向传输电容Crss,晶体管类型,反向峰值电压(最大值),栅极源极击穿电压,额定电流,供应商器件封装,电流-DC正向(If),漏极电流,长x宽/尺寸,制造商标准提前期,元件生命周期,功率(最大值),反向耐压VR,输入电容Ciss,Ifsm - 正向浪涌峰值电流,漏极电流Idss,电流放大倍数hFE(最小值),负荷调节,充电电量,配置,不同 Id,Vgs时的 RdsOn(最大值),正向电流If,平均整流电流,工作温度-结,反向恢复时间(trr),集电极-发射极电压 VCEO,应用等级,额定电压,二极管类型,正向连续电流,输出电流,输入电容,原产国家,发射极基极导通电压VBE(on),湿气敏感性等级(MSL),系列,脚间距,静态电流,输出电压精度,栅极电荷(Qg)(Max),输入电流,最小包装,正向压降VF Max,Vce饱和压降(Max),电阻器-发射极基底(R3)(欧姆),Vf正向峰值电压,功率耗散(最大值),栅极电荷(Qg),高度,认证信息,输出电压,输出电压(最小值/固定),零件状态,发射极与基极之间电压 VEBO,噪声系数,结电容,应用,引脚数,
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8986972
2527
/category/Bipolar-Transistors-BJT_2527?proid=8986972&N=
$
20 0.01568
200 0.013622
600 0.012544
3000 0.011662
9000 0.011074
21000 0.010682
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