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                                MUN5233T1G
                                                                    Home
                                                                    Universal Triode

ON Semiconductor

Manufacturer:

ON Semiconductor

Mfr.Part #:

MUN5233T1G

Package:

SC-70,SOT-323

RoHS:
Datasheet:

MUN5233T1G

Description:

Package/Enclosure : SC-70,SOT-323

ECAD Model:
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Package/Enclosure,安装类型,Voltage Rating,正向电流,Manufacturer,特性,湿气敏感性等级 (MSL),集电极电流Ic(最大值),Vce饱和值,功率耗散,集电极-基极电压(VCBO),是否无铅,Current Rating,通态电流 It,击穿电压,电流-集电极截止(最大值),品牌,电压-通态(Vtm)(最大值),集电极-发射极击穿电压V(BR)CEO,栅极触发电流,基极电阻(R1),增益,原始制造商,集射极击穿电压Vce(Max),额定功率,电压-集射极击穿(最大值),断态电压,电阻器-基底(R2)(欧姆),无卤,基射极电阻(R2),包装,正向电压(Vf)(典型值),通态电流It(RMS),印字代码,Vce饱和压降,DC正向电流(If),集电极与基极之间电压 VCBO,极性,集电极-发射极击穿电压,电流-不重复浪涌50,60Hz(Itsm),存储温度,Vrrm反向重复峰值电压,输入电压,三端双向可控硅类型,跃迁频率,长x宽/尺寸,断态电流,栅极触发电压,应用等级,Vce饱和值(最大值),供应商器件封装,封装/外壳,元件生命周期,集电极电流 Ic,电阻器比率,功率(最大值),制造商标准提前期,集电极-基极击穿电压 V(BR)CBO,集电极-发射极电压 VCEO,工作温度,集射极击穿电压(最大值),保持电流Ih最大值,配置,电流放大倍数hFE(最小值),系列,发射极基极导通电压VBE(on),原产国家,湿气敏感性等级(MSL),DC电流增益(hFE)(Min&Range),Vce饱和压降(Max),通道数,脚间距,输入电阻,认证信息,发射极与基极之间电压 VEBO,电阻器-发射极基底(R3)(欧姆),最小包装,高度,噪声系数,晶体管类型,可控硅类型,零件状态,应用,引脚数,
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9004623
2952
/category/Universal-Triode_2952?proid=9004623&N=
$
1 0.027621
100 0.025786
1000 0.023806
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