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                                MMSZ5260BT1G
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                                                                    Rectifier Diode

ON SEMICONDUCTOR

Manufacturer:

ON SEMICONDUCTOR

Mfr.Part #:

MMSZ5260BT1G

Package:

RoHS:
Datasheet:

MMSZ5260BT1G

Description:

500 mW SOD-123

ECAD Model:
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Product Technical Specifications

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Package/Enclosure,Voltage Rating,二极管配置,湿气敏感性等级 (MSL),Forward Voltage (Vf) @ If,Forward Voltage (Vf@If),Manufacturer,Tolerance,安装类型,电流-平均整流(Io)(每二极管),线规或范围- mm²,Reverse Voltage (Vr),是否无铅,品牌,总电容C,Reverse Leakage Current,Reverse Recovery Time (trr),工作电流,最大耗散功率,Diode Configuration,原始制造商,Average Rectified Current (Io),包装,正向压降VF Min,印字代码,容差Tol,热阻,正向压降VF,正向电流,参考重量,Reverse Leakage Current (Ir),最大直流阻断电压VDC,最大有效值电压Vrms,稳压值Vz,Izt-测试电流,稳定电流,存储温度,Operating Temperature,长x宽/尺寸,反向击穿电压,精度,峰值脉冲电流(Ipp),最大稳压值,供应商器件封装,反向漏电流IR,线规或范围-mm²,制造商标准提前期,封装/外壳,反向电流Izt,Zzt阻抗,结电容Cj,元件生命周期,系列,工作温度,脚间距,反向耐压VR(最大值),击穿电压 V(BR)-min,原产国家,平均整流电流IF,反向峰值电压(最大值),二极管类型,Izk-稳定电流Min,应用等级,Zzk阻抗Max,速度,标准稳压值,不同 Vr,F时的电容,电流-DC正向(If),Vf正向峰值电压,平均整流电流,认证信息,正向电流If,基准电压的容限率,Ifsm - 正向浪涌峰值电流,反向耐压VR,最小稳压值,功率耗散(最大值),动态电阻(最大值),最小包装,反向恢复时间(trr),湿气敏感性等级(MSL),阻抗Typ,正向压降VF Max,稳态电流,高度,工作温度-结,结电容,零件状态,容差,引脚数,应用,
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9015497
2897
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$
1 0.024080
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