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IPW90R120C3

Infineon Technologies IPW90R120C3

Manufacturer:

Infineon Technologies

Mfr.Part #:

IPW90R120C3

Package:

PG-TO-247-3

RoHS:
Datasheet:

IPW90R120C3

Description:

MOSFET N-Ch 900V 36A TO247-3 CoolMOS C3

Lead Time:

26 Weeks

Product Technical Specifications

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Product Attribute Attribute Value Search Similar
Manufacturer Infineon
Product Category MOSFET
RoHS
Rds On - Drain-Source Resistance 120 mOhms
Rise Time 20 ns
Fall Time 25 ns
Mounting Style Through Hole
Pd - Power Dissipation 417 W
Product Type MOSFET
Number of Channels 1 Channel
Package / Case PG-TO-247-3
Length 16.13 mm
Width 5.21 mm
Height 21.1 mm
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Channel Mode Enhancement
Series CoolMOS C3
Packaging Tube
Part # Aliases IPW90R120C3FKSA1 IPW9R12C3XK SP000413750
Brand Infineon Technologies
Configuration Single
Transistor Polarity N-Channel
Transistor Type 1 N-Channel
Vgs - Gate-Source Voltage 10 V
Vgs th - Gate-Source Threshold Voltage 2.5 V
Qg - Gate Charge 270 nC
Technology Si
Id - Continuous Drain Current 36 A
Vds - Drain-Source Breakdown Voltage 900 V
Typical Turn-Off Delay Time 400 ns
Typical Turn-On Delay Time 70 ns
Factory Pack Quantity 240
Subcategory MOSFETs
Unit Weight 1.340411 oz
Tradename CoolMOS
Comments ( 0 )
No comments received~
Manufacturer,Continuous Drain Current (Id) @ 25°C,Power Dissipation-Max (Ta=25°C),Current - Continuous Drain (Id) @ 25°C,High Side Voltage - Max (Bootstrap),Driven Configuration,Features,Gate Type,Current - Peak Output (Source, Sink),Logic Voltage - VIL, VIH,Operating Supply Voltage,Number of Drivers,Maximum DC Collector Current,Input Type,Collector-Emitter Breakdown Voltage,,Product Category,Shipping Restrictions,Type,Product,Forward Transconductance - Min,Rds On - Drain-Source Resistance,Rise Time,Fall Time,Pd - Power Dissipation,Compliance,Product Type,Number of Channels,Termination Style,Package / Case,Minimum Operating Temperature,Moisture Sensitive,Series,Part # Aliases,Transistor Polarity,Transistor Type,Vgs - Gate-Source Voltage,Vgs th - Gate-Source Threshold Voltage,Qg - Gate Charge,Technology,Id - Continuous Drain Current,Vds - Drain-Source Breakdown Voltage,Typical Turn-Off Delay Time,Typical Turn-On Delay Time,Subcategory,Unit Weight,Tradename,
Infineon,,,,,,,,,,,,,,,,MOSFET,,,,,120 mOhms,20 ns,25 ns,417 W,,MOSFET,1 Channel,,PG-TO-247-3,- 55 C,,CoolMOS C3,IPW90R120C3FKSA1 IPW9R12C3XK SP000413750,N-Channel,1 N-Channel,10 V,2.5 V,270 nC,Si,36 A,900 V,400 ns,70 ns,MOSFETs,1.340411 oz,CoolMOS,
742095
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=742095&N=
$
2 14.17079
10 11.52878
60 10.64810
120 9.68737
240 8.56653
240 8.08615
960 7.98138
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