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IXXH60N65B4H1

IXXH60N65B4H1

Manufacturer:

IXYS

Mfr.Part#:

IXXH60N65B4H1

Package:

TO-247AD-3

RoHS:
Datasheet:

IXXH60N65B4H1

Description:

IGBT Transistors 650V/106A TRENCH IGBT GENX4 XPT

Lead Time:

18 Weeks

Product Technical Specifications

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Product Attribute Attribute Value Search Similar
Manufacturer IXYS
Product Category IGBT Transistors
RoHS
Maximum Gate Emitter Voltage 20 V
Mounting Style Through Hole
Pd - Power Dissipation 380 W
Product Type IGBT Transistors
Package / Case TO-247AD-3
Collector- Emitter Voltage VCEO Max 650 V
Collector-Emitter Saturation Voltage 1.7 V
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Series IXXH60N65
Packaging Tube
Brand IXYS
Configuration Single
Continuous Collector Current at 25 C 116 A
Continuous Collector Current Ic Max 60 A
Gate-Emitter Leakage Current 100 nA
Technology Si
Factory Pack Quantity 30
Subcategory IGBTs
Unit Weight 0.158733 oz
Tradename XPT
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Maximum DC Collector Current,,Gate Threshold Voltage,Vgs th - Gate-Source Threshold Voltage,Manufacturer,Collector-Emitter Breakdown Voltage,Product Category,Operating Temperature Range,Pd - Power Dissipation,Product Type,Package / Case,Collector- Emitter Voltage VCEO Max,Collector-Emitter Saturation Voltage,Minimum Operating Temperature,Moisture Sensitive,Series,Part # Aliases,Continuous Collector Current,Continuous Collector Current at 25 C,Continuous Collector Current Ic Max,Gate-Emitter Leakage Current,Technology,Subcategory,Unit Weight,Tradename,
,,,,IXYS,,IGBT Transistors,,380 W,IGBT Transistors,TO-247AD-3,650 V,1.7 V,- 55 C,,IXXH60N65,,,116 A,60 A,100 nA,Si,IGBTs,0.158733 oz,XPT,
779673
1156
/category/Semiconductors/Discrete-Semiconductors/Transistors/IGBT-Transistors_1156?proid=779673&N=
$
1 5.07803
10 4.47370
30 4.37897
100 4.23687
102 4.23687
104 4.23687
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