Convert Semiconductor CS4N80D

Manufacturer,Drain-source breakdown voltage,FET类型,工作温度(Tj),Type of installation,功率(Max),漏极电流Id(连续)(Max),search for,Package,On Resistance - Max,Drain current,连续漏极电流Id@25℃,FET configuration,Channel Type,High Side Voltage - Max (Bootstrap),Current - Peak Output (Source, Sink),Logic Voltage - VIL, VIH,Gate Type,Features,Driven Configuration,Current - Continuous Drain (Id) @ 25°C,Continuous Drain Current (Id) @ 25°C,漏极电流Idss,品牌,原产国家,引线数量,不同 Id，Vgs时的 RdsOn（最大值）,零件状态,是否无铅,存储温度,元件生命周期,漏源极电压（Vdss）,Power Dissipation-Max (Ta=25°C),Package/Temperature,Pt,VCES,VCE(sat)(Typ.),IC(Max.)(A),导通电阻Rds On(Max),漏源电压(Vdss),输入电容(Ciss)(Max),栅极电荷(Qg)(Max),Operating Supply Voltage,Number of Drivers,Maximum DC Collector Current,Input Type,Collector-Emitter Breakdown Voltage,,Product Category,Shipping Restrictions,Type,Product,Forward Transconductance - Min,Rds On - Drain-Source Resistance,Rise Time,Fall Time,Pd - Power Dissipation,Compliance,Product Type,Number of Channels,Termination Style,Package / Case,Minimum Operating Temperature,Moisture Sensitive,Series,Part # Aliases,Transistor Polarity,Transistor Type,Vgs - Gate-Source Voltage,Vgs th - Gate-Source Threshold Voltage,Qg - Gate Charge,Technology,Id - Continuous Drain Current,Vds - Drain-Source Breakdown Voltage,Typical Turn-Off Delay Time,Typical Turn-On Delay Time,Subcategory,Unit Weight,Tradename,