OptiMOS 5 power MOSFET in SuperSO8 package offers the latest technology together with temperature improvements in the package

OptiMOS P-channel 60V MOSFETs in SOT-23 package is ideally suited for load switch, battery management as well as reverse polarity protection applications

Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N- and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety of applications including LED Lighting , ADAS, body control units, SMPS and motor control .

The 600V CoolMOS P7 superjunction SJ MOSFET is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R on xA and the inherently low gate charge Q G of the CoolMOS 7th generation platform ensure its high efficiency.

Infineon is one of the few semiconductor manufacturers worldwide to offer depletion MOSFETs. Areas of application include power supply startup power, over-voltage protection, in-rush-current limiter, off-line voltage reference. With one single component it is possible to realize a simple current regulator. All products are suitable for automotive applications. In order to meet special requirements, depletion MOSFETs are available with V GSth indicator on the reel.

MOSFET N-CH 100V 31A DPAK

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

New 40V and 60V product families, feature not only the industrys lowest R DSon but also a perfect switching behavior for fast switching applications. 15% lower R DSon and 31% lower figure of merit R DSon x Q g compared to alternative devices has been realized by advanced thin wafer technology.

POWER FIELD-EFFECT TRANSISTOR, 2

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.