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                                MJD122T4G
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                                                                    Darlington Transistors

onsemi

Manufacturer:

onsemi

Mfr.Part #:

MJD122T4G

Package:

TO-252

RoHS:
Datasheet:

MJD122T4G

Description:

100V 1000@4V,4A NPN 8A 1.75W TO-252 Darlington Transistors ROHS

ECAD Model:
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DC current gain (hFE@Vce,Ic),特性,安装类型,Collector-emitter voltage (Vceo),品牌,是否无铅,电流-集电极截止(最大值),集电极电流Ic(最大值),额定功率,功率耗散,Transistor Type,Transition frequency (fT),集射极击穿电压Vce(Max),包装,Collector cut-off current (Icbo@Vcb),极性,跃迁频率,正向电压(Vf)(典型值),Collector Current (Ic),原始制造商,印字代码,Operating Temperature,长x宽/尺寸,封装/外壳,集电极与基极之间电压 VCBO,Power Dissipation (Pd),供应商器件封装,制造商标准提前期,存储温度,Collector-emitter saturation voltage (VCE(sat)@Ic,Ib),工作温度,Vce饱和值(最大值),功率(最大值),集电极-发射极电压 VCEO,元件生命周期,配置,集电极电流 Ic,系列,电流放大倍数hFE(最小值),湿气敏感性等级(MSL),脚间距,原产国家,DC电流增益(hFE)(Min&Range),Vce饱和压降(Max),最小包装,发射极与基极之间电压 VEBO,认证信息,零件状态,高度,晶体管类型,引脚数,
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8956579
3630
/category/Darlington-Transistors_3630?proid=8956579&N=
$
1 0.61593
10 0.506758
30 0.452172
100 0.399154
500 0.349272
1000 0.332122
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