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                                CSD23203W
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Texas Instruments CSD23203W

Manufacturer:

Texas Instruments

Mfr.Part #:

CSD23203W

Package:

DSBGA-6

RoHS:
Datasheet:

CSD23203W

Description:

MOSFET CSD23203W 8 V P-chan MOSFET 6-DSBGA

ECAD Model:

Product Technical Specifications

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Manufacturer Texas Instruments
Product Category MOSFET
RoHS
Forward Transconductance - Min 14 S
Rds On - Drain-Source Resistance 53 mOhms
Rise Time 12 ns
Fall Time 27 ns
Mounting Style SMD/SMT
Pd - Power Dissipation 750 mW
Product Type MOSFET
Number Of Channels 1 Channel
Package / Case DSBGA-6
Length 1.5 mm
Width 1 mm
Height 0.625 mm
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Channel Mode Enhancement
Series CSD23203W
Packaging Cut Tape or Reel
Brand Texas Instruments
Configuration Single
Transistor Polarity P-Channel
Transistor Type 1 P-Channel
Vgs - Gate-Source Voltage 6 V
Vgs Th - Gate-Source Threshold Voltage 1.1 V
Qg - Gate Charge 6.3 nC
Technology Si
Id - Continuous Drain Current 3 A
Vds - Drain-Source Breakdown Voltage 8 V
Typical Turn-Off Delay Time 58 ns
Typical Turn-On Delay Time 14 ns
Factory Pack Quantity 3000
Subcategory MOSFETs
Unit Weight 0.000049 oz
Tradename NexFET
Comments ( 0 )
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Manufacturer,Drain-source breakdown voltage,FET类型,工作温度(Tj),Type of installation,功率(Max),漏极电流Id(连续)(Max),search for,Package,On Resistance - Max,Drain current,连续漏极电流Id@25℃,FET configuration,Channel Type,High Side Voltage - Max (Bootstrap),Current - Peak Output (Source, Sink),Logic Voltage - VIL, VIH,Gate Type,Features,Driven Configuration,Current - Continuous Drain (Id) @ 25°C,Continuous Drain Current (Id) @ 25°C,漏极电流Idss,品牌,原产国家,引线数量,不同 Id,Vgs时的 RdsOn(最大值),零件状态,是否无铅,存储温度,元件生命周期,漏源极电压(Vdss),Power Dissipation-Max (Ta=25°C),Package/Temperature,Pt,VCES,VCE(sat)(Typ.),IC(Max.)(A),导通电阻Rds On(Max),漏源电压(Vdss),输入电容(Ciss)(Max),栅极电荷(Qg)(Max),Operating Supply Voltage,Number of Drivers,Maximum DC Collector Current,Input Type,Collector-Emitter Breakdown Voltage,,Product Category,Shipping Restrictions,Type,Product,Forward Transconductance - Min,Rds On - Drain-Source Resistance,Rise Time,Fall Time,Pd - Power Dissipation,Compliance,Product Type,Number of Channels,Termination Style,Package / Case,Minimum Operating Temperature,Moisture Sensitive,Series,Part # Aliases,Transistor Polarity,Transistor Type,Vgs - Gate-Source Voltage,Vgs th - Gate-Source Threshold Voltage,Qg - Gate Charge,Technology,Id - Continuous Drain Current,Vds - Drain-Source Breakdown Voltage,Typical Turn-Off Delay Time,Typical Turn-On Delay Time,Subcategory,Unit Weight,Tradename,
Texas Instruments,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,MOSFET,,,,14 S,53 mOhms,12 ns,27 ns,750 mW,,MOSFET,1 Channel,,DSBGA-6,- 55 C,,CSD23203W,,P-Channel,1 P-Channel,6 V,1.1 V,6.3 nC,Si,3 A,8 V,58 ns,14 ns,MOSFETs,0.000049 oz,NexFET,
753295
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=753295&N=
$
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