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                                CSD19533Q5A
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Texas Instruments CSD19533Q5A

Manufacturer:

Texas Instruments

Mfr.Part #:

CSD19533Q5A

Package:

VSONP-8

RoHS:
Datasheet:

CSD19533Q5A

Description:

MOSFET 100V 7.8mOhm N-CH Pwr MOSFET

Product Technical Specifications

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Product Attribute Attribute Value Search Similar
Manufacturer Texas Instruments
Product Category MOSFET
RoHS
Rds On - Drain-Source Resistance 9.4 mOhms
Rise Time 6 ns
Fall Time 5 ns
Mounting Style SMD/SMT
Pd - Power Dissipation 96 W
Product Type MOSFET
Number Of Channels 1 Channel
Package / Case VSONP-8
Length 6 mm
Width 4.9 mm
Height 1 mm
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Channel Mode Enhancement
Series CSD19533Q5A
Packaging Cut Tape or Reel
Brand Texas Instruments
Configuration Single
Transistor Polarity N-Channel
Transistor Type 1 N-Channel Power MOSFET
Vgs - Gate-Source Voltage 10 V
Vgs Th - Gate-Source Threshold Voltage 2.2 V
Qg - Gate Charge 27 nC
Technology Si
Id - Continuous Drain Current 100 A
Vds - Drain-Source Breakdown Voltage 100 V
Typical Turn-Off Delay Time 16 ns
Typical Turn-On Delay Time 6 ns
Factory Pack Quantity 2500
Subcategory MOSFETs
Tradename NexFET
Comments ( 0 )
No comments received~
Manufacturer,Gate Type,栅极电荷(Qg)(Max),连续漏极电流Id@25℃,FET类型,工作温度(Tj),Type of installation,功率(Max),Continuous Drain Current (Id) @ 25°C,Power Dissipation-Max (Ta=25°C),Current - Continuous Drain (Id) @ 25°C,Driven Configuration,Features,Package/Temperature,Logic Voltage - VIL, VIH,Current - Peak Output (Source, Sink),High Side Voltage - Max (Bootstrap),Channel Type,FET configuration,Drain-source breakdown voltage,Drain current,On Resistance - Max,Package,search for,漏极电流Id(连续)(Max),导通电阻Rds On(Max),IC(Max.)(A),VCE(sat)(Typ.),漏源电压(Vdss),Pt,VCES,输入电容(Ciss)(Max),Operating Supply Voltage,Number of Drivers,Maximum DC Collector Current,Input Type,Collector-Emitter Breakdown Voltage,,Product Category,Shipping Restrictions,Type,Product,Forward Transconductance - Min,Rds On - Drain-Source Resistance,Rise Time,Fall Time,Pd - Power Dissipation,Compliance,Product Type,Number of Channels,Termination Style,Package / Case,Minimum Operating Temperature,Moisture Sensitive,Series,Part # Aliases,Transistor Polarity,Transistor Type,Vgs - Gate-Source Voltage,Vgs th - Gate-Source Threshold Voltage,Qg - Gate Charge,Technology,Id - Continuous Drain Current,Vds - Drain-Source Breakdown Voltage,Typical Turn-Off Delay Time,Typical Turn-On Delay Time,Subcategory,Unit Weight,Tradename,
Texas Instruments,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,MOSFET,,,,,9.4 mOhms,6 ns,5 ns,96 W,,MOSFET,1 Channel,,VSONP-8,- 55 C,,CSD19533Q5A,,N-Channel,1 N-Channel Power MOSFET,10 V,2.2 V,27 nC,Si,100 A,100 V,16 ns,6 ns,MOSFETs,,NexFET,
738285
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=738285&N=
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