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                                RSB6.8CMGJT2N 8K/R
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                                                                    ESD Protection Devices

ROHM Semicon

Manufacturer:

ROHM Semicon

Mfr.Part #:

RSB6.8CMGJT2N 8K/R

Package:

SOD-923

RoHS:
Datasheet:

RSB6.8CMGJT2N 8K/R

Description:

SOD-923 ESD Protection Devices ROHS

ECAD Model:
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Manufacturer,Packaging,Package / Case,Breakdown Voltage (VBR),Type,安装类型,二极管配置,Package/Enclosure,工作电压(范围),Peak Pulse Current (Ipp)@10/1000us,Reverse Leakage Current (Ir),level of protection,Reverse Leakage Current,工作电压VR-VI(max),钳位电压 VC,是否无铅,功率耗散,Peak Pulse Power Dissipation (Ppp)@10/1000us,保持电流,Clamping Voltage@Ipp,Contact Discharge Vesd,品牌,最大耗散功率,工作电流,器件组件数(电路数),Maximum Clamping Voltage,湿气敏感性等级 (MSL),Peak Pulse Power(Ppp)@8/20us,Number of Lines,反向漏电流 IR,电源电压,连续漏极电流Id@25℃,反向漏电流IR,总电容C,Breakdown Voltage,Junction Capacitance(Cj)@1MHz,Reverse Stand-Off Voltage (Vrwm),电源线路保护,原始制造商,断态电压,Peak Pulse Current(Ipp)@8/20us,功率-峰值脉冲,漏源击穿电压BVDSS,正向压降VF,最大稳压值,技术(开关管),polarity,无卤,印字代码,额定电流,Operating Temperature,Human Body Model,反向击穿电压Max,结电容值,极性,测试电流(IT),包装,存储温度,栅极源极击穿电压,速度,耗散功率(Max),Machine Model,长x宽/尺寸,峰值脉冲功率,反向传输电容Crss,等级,二极管类型,封装/外壳,制造商标准提前期,输入电容Ciss,反向峰值电压(最大值),结电容Cj,元件生命周期,充电电量,平均整流电流IF,工作温度,配置,反向耐压VR,平均整流电流,峰值脉冲电流(Ipp),极性(单双向),供应商器件封装,不同 Id,Vgs时的 RdsOn(最大值),反向恢复时间(trr),最小稳压值,额定电压-DC,系列,单向通道,最大AC电压,击穿电压Max,原产国家,电压-断态,栅极电荷(Qg)(Max),脚间距,工作温度-结,击穿电压 V(BR)-min,湿气敏感性等级(MSL),压敏电压,认证信息,通道数,漏源电压(Vdss),最大DC电压,正向压降VF Max,结电容,电路数,零件状态,反向击穿电压Min,应用,最小包装,高度,类型,引脚数,晶体管类型,
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5298897
2573
/category/ESD-Protection-Devices_2573?proid=5298897&N=
$
20 0.02352
200 0.018914
600 0.016268
2000 0.0147
8000 0.01176
16000 0.010976
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