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                                NVD5117PLT4G-VF01
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ON Semiconductor NVD5117PLT4G-VF01

Manufacturer:

ON Semiconductor

Mfr.Part #:

NVD5117PLT4G-VF01

Package:

DPAK-3

RoHS:
Datasheet:

NVD5117PLT4G-VF01

Description:

MOSFET PFET DPAK 60V 61A 16MOHM

ECAD Model:
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Product Technical Specifications

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Product Attribute Attribute Value Search Similar
Manufacturer ON Semiconductor
Product Category MOSFET
RoHS
Forward Transconductance - Min 30 S
Rds On - Drain-Source Resistance 16 mOhms
Rise Time 195 ns
Fall Time 132 ns
Mounting Style SMD/SMT
Pd - Power Dissipation 118 W
Product Type MOSFET
Number Of Channels 1 Channel
Package / Case DPAK-3
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Channel Mode Enhancement
Qualification AEC-Q101
Packaging Cut Tape or Reel
Brand ON Semiconductor
Configuration Single
Transistor Polarity P-Channel
Vgs - Gate-Source Voltage 20 V
Vgs Th - Gate-Source Threshold Voltage 2.5 V
Qg - Gate Charge 85 nC
Technology Si
Id - Continuous Drain Current 61 A
Vds - Drain-Source Breakdown Voltage 60 V
Typical Turn-Off Delay Time 50 ns
Typical Turn-On Delay Time 22 ns
Factory Pack Quantity 2500
Subcategory MOSFETs
Manufacturer,Drain-source breakdown voltage,FET类型,工作温度(Tj),Type of installation,功率(Max),漏极电流Id(连续)(Max),search for,Package,On Resistance - Max,Drain current,连续漏极电流Id@25℃,FET configuration,Channel Type,High Side Voltage - Max (Bootstrap),Current - Peak Output (Source, Sink),Logic Voltage - VIL, VIH,Gate Type,Features,Driven Configuration,Current - Continuous Drain (Id) @ 25°C,Continuous Drain Current (Id) @ 25°C,漏极电流Idss,品牌,原产国家,引线数量,不同 Id,Vgs时的 RdsOn(最大值),零件状态,是否无铅,存储温度,元件生命周期,漏源极电压(Vdss),Power Dissipation-Max (Ta=25°C),Package/Temperature,Pt,VCES,VCE(sat)(Typ.),IC(Max.)(A),导通电阻Rds On(Max),漏源电压(Vdss),输入电容(Ciss)(Max),栅极电荷(Qg)(Max),Operating Supply Voltage,Number of Drivers,Maximum DC Collector Current,Input Type,Collector-Emitter Breakdown Voltage,,Product Category,Shipping Restrictions,Type,Product,Forward Transconductance - Min,Rds On - Drain-Source Resistance,Rise Time,Fall Time,Pd - Power Dissipation,Compliance,Product Type,Number of Channels,Termination Style,Package / Case,Minimum Operating Temperature,Moisture Sensitive,Series,Part # Aliases,Transistor Polarity,Transistor Type,Vgs - Gate-Source Voltage,Vgs th - Gate-Source Threshold Voltage,Qg - Gate Charge,Technology,Id - Continuous Drain Current,Vds - Drain-Source Breakdown Voltage,Typical Turn-Off Delay Time,Typical Turn-On Delay Time,Subcategory,Unit Weight,Tradename,
ON Semiconductor,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,MOSFET,,,,30 S,16 mOhms,195 ns,132 ns,118 W,,MOSFET,1 Channel,,DPAK-3,- 55 C,,,,P-Channel,,20 V,2.5 V,85 nC,Si,61 A,60 V,50 ns,22 ns,MOSFETs,,,
714452
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=714452&N=
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