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                                NTR2101PT1G
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ON Semiconductor NTR2101PT1G

Manufacturer:

ON Semiconductor

Mfr.Part #:

NTR2101PT1G

Package:

SOT-23-3

RoHS:
Datasheet:

NTR2101PT1G

Description:

MOSFET -8V 3.7A P-Channel

Product Technical Specifications

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Product Attribute Attribute Value Search Similar
Manufacturer ON Semiconductor
Product Category MOSFET
RoHS
Type MOSFET
Product MOSFET Small Signal
Forward Transconductance - Min 9 S
Rds On - Drain-Source Resistance 120 mOhms
Rise Time 15.75 ns
Fall Time 31 ns
Mounting Style SMD/SMT
Pd - Power Dissipation 960 mW
Product Type MOSFET
Number Of Channels 1 Channel
Package / Case SOT-23-3
Length 2.9 mm
Width 1.3 mm
Height 0.94 mm
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Channel Mode Enhancement
Series NTR2101P
Packaging Cut Tape or Reel
Brand ON Semiconductor
Configuration Single
Transistor Polarity P-Channel
Transistor Type 1 P-Channel
Vgs - Gate-Source Voltage 1.8 V
Vgs Th - Gate-Source Threshold Voltage 400 mV
Qg - Gate Charge 12 nC
Technology Si
Id - Continuous Drain Current 3.7 A
Vds - Drain-Source Breakdown Voltage 8 V
Typical Turn-Off Delay Time 38 ns
Typical Turn-On Delay Time 7.4 ns
Factory Pack Quantity 3000
Subcategory MOSFETs
Unit Weight 0.000282 oz
Comments ( 0 )
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Manufacturer,导通电阻Rds On(Max),Continuous Drain Current (Id) @ 25°C,Power Dissipation-Max (Ta=25°C),Current - Continuous Drain (Id) @ 25°C,Driven Configuration,Features,Gate Type,Logic Voltage - VIL, VIH,Current - Peak Output (Source, Sink),High Side Voltage - Max (Bootstrap),Channel Type,FET configuration,Drain-source breakdown voltage,Drain current,Package,漏源电压(Vdss),输入电容(Ciss)(Max),栅极电荷(Qg)(Max),连续漏极电流Id@25℃,FET类型,工作温度(Tj),Type of installation,功率(Max),漏极电流Id(连续)(Max),search for,On Resistance - Max,Operating Supply Voltage,Number of Drivers,Maximum DC Collector Current,Input Type,Collector-Emitter Breakdown Voltage,,Product Category,Shipping Restrictions,Type,Product,Forward Transconductance - Min,Rds On - Drain-Source Resistance,Rise Time,Fall Time,Pd - Power Dissipation,Compliance,Product Type,Number of Channels,Termination Style,Package / Case,Minimum Operating Temperature,Moisture Sensitive,Series,Part # Aliases,Transistor Polarity,Transistor Type,Vgs - Gate-Source Voltage,Vgs th - Gate-Source Threshold Voltage,Qg - Gate Charge,Technology,Id - Continuous Drain Current,Vds - Drain-Source Breakdown Voltage,Typical Turn-Off Delay Time,Typical Turn-On Delay Time,Subcategory,Unit Weight,Tradename,
ON Semiconductor,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,MOSFET,,MOSFET,MOSFET Small Signal,9 S,120 mOhms,15.75 ns,31 ns,960 mW,,MOSFET,1 Channel,,SOT-23-3,- 55 C,,NTR2101P,,P-Channel,1 P-Channel,1.8 V,400 mV,12 nC,Si,3.7 A,8 V,38 ns,7.4 ns,MOSFETs,0.000282 oz,,
736065
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=736065&N=
$
136 0.11737
200 0.11509
300 0.11487
500 0.11418
1000 0.11395
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