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                                2N7002LT1G
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                                                                    Discrete Semiconductors
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                                                                    MOSFET

ON Semiconductor 2N7002LT1G

Manufacturer:

ON Semiconductor

Mfr.Part #:

2N7002LT1G

Package:

SOT-23-3

RoHS:
Datasheet:

2N7002LT1G

Description:

MOSFET 60V 115mA N-Channel

Lead Time:

4 Weeks

Product Technical Specifications

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Product Attribute Attribute Value Search Similar
Manufacturer ON Semiconductor
Product Category MOSFET
RoHS
Type MOSFET
Product MOSFET Small Signal
Forward Transconductance - Min 80 mS
Rds On - Drain-Source Resistance 7.5 Ohms
Mounting Style SMD/SMT
Pd - Power Dissipation 300 mW
Product Type MOSFET
Number Of Channels 1 Channel
Package / Case SOT-23-3
Length 2.9 mm
Width 1.3 mm
Height 0.94 mm
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Channel Mode Enhancement
Series 2N7002L
Packaging Cut Tape or Reel
Brand ON Semiconductor
Configuration Single
Transistor Polarity N-Channel
Transistor Type 1 N-Channel
Vgs - Gate-Source Voltage 10 V
Vgs Th - Gate-Source Threshold Voltage 1 V
Technology Si
Id - Continuous Drain Current 115 mA
Vds - Drain-Source Breakdown Voltage 60 V
Typical Turn-Off Delay Time 40 ns
Typical Turn-On Delay Time 20 ns
Factory Pack Quantity 3000
Subcategory MOSFETs
Unit Weight 0.001093 oz
Comments ( 0 )
No comments received~
Manufacturer,search for,Continuous Drain Current (Id) @ 25°C,Power Dissipation-Max (Ta=25°C),Current - Continuous Drain (Id) @ 25°C,Driven Configuration,Features,Gate Type,Logic Voltage - VIL, VIH,Current - Peak Output (Source, Sink),High Side Voltage - Max (Bootstrap),Channel Type,Package,Drain-source breakdown voltage,On Resistance - Max,Drain current,FET configuration,Operating Supply Voltage,Number of Drivers,Maximum DC Collector Current,Input Type,Collector-Emitter Breakdown Voltage,,Product Category,Shipping Restrictions,Type,Product,Forward Transconductance - Min,Rds On - Drain-Source Resistance,Rise Time,Fall Time,Pd - Power Dissipation,Compliance,Product Type,Number of Channels,Termination Style,Package / Case,Minimum Operating Temperature,Moisture Sensitive,Series,Part # Aliases,Transistor Polarity,Transistor Type,Vgs - Gate-Source Voltage,Vgs th - Gate-Source Threshold Voltage,Qg - Gate Charge,Technology,Id - Continuous Drain Current,Vds - Drain-Source Breakdown Voltage,Typical Turn-Off Delay Time,Typical Turn-On Delay Time,Subcategory,Unit Weight,Tradename,
ON Semiconductor,,,,,,,,,,,,,,,,,,,,,,,MOSFET,,MOSFET,MOSFET Small Signal,80 mS,7.5 Ohms,,,300 mW,,MOSFET,1 Channel,,SOT-23-3,- 55 C,,2N7002L,,N-Channel,1 N-Channel,10 V,1 V,,Si,115 mA,60 V,40 ns,20 ns,MOSFETs,0.001093 oz,,
726091
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=726091&N=
$
1405 0.01135
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