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                                ESD9X7.0ST5G
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                                                                    Circuit Protection
                                                                    ESD Suppressors / TVS Diodes

ON Semiconductor ESD9X7.0ST5G

Manufacturer:

ON Semiconductor

Mfr.Part #:

ESD9X7.0ST5G

Package:

SOD-923-2

RoHS:
Datasheet:

ESD9X7.0ST5G

Description:

ESD Suppressors / TVS Diodes SOD-923 ESD PROTECTN

ECAD Model:
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Product Technical Specifications

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Manufacturer ON Semiconductor
Product Category ESD Suppressors / TVS Diodes
RoHS
Pd - Power Dissipation 150 mW
Product Type ESD Suppressors
Polarity Unidirectional
Working Voltage 7 V
Number Of Channels 1 Channel
Termination Style SMD/SMT
Package / Case SOD-923-2
Breakdown Voltage 7.5 V
Clamping Voltage 25 V
Pppm - Peak Pulse Power Dissipation 100 W
Vesd - Voltage ESD Air Gap 30 kV
Vesd - Voltage ESD Contact 30 kV
Cd - Diode Capacitance 65 pF
Ipp - Peak Pulse Current 4 A
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Series ESD9X
Packaging Cut Tape or Reel
Brand ON Semiconductor
Factory Pack Quantity 8000
Subcategory TVS Diodes / ESD Suppression Diodes
ESD9X7.0ST5G © Semiconductor Components Industries, LLC, 2012October, 2017 − Rev. 81Publication Order Number: ESD9X3.3ST5G/D ESD9X3.3ST5G Series, SZESD9X3.3ST5G Series ESD Protection Diode Micro−Packaged Diodesfor ESD Protection The ESD9X Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD. Because of its small size, it is suited for use in cellular phones, MP3 players, digital cameras and many other portable applications where board space is at a premium. Specification Features: • Low Clamping Voltage • Small Body Outline Dimensions: 0.039″ x 0.024″(1.0 mm x 0.60 mm) • Low Body Height: 0.017″ (0.43 mm) Max • Stand−off Voltage: 3.3 V − 12 V • Low Leakage • Response Time is Typically < 1 ns • ESD Rating of Class 3 (> 16 kV) per Human Body Model • IEC61000−4−2 Level 4 ESD Protection • SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These are Pb−Free Devices Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic Epoxy Meets UL 94 V−0 LEAD FINISH: 100% Matte Sn (Tin) MOUNTING POSITION: Any QUALIFIED MAX REFLOW TEMPERATURE: 260°C Device Meets MSL 1 Requirements MAXIMUM RATINGS Rating Symbol Value Unit IEC 61000−4−2 (ESD) Contact Air ±30 ±30 kV ESD Voltage Per Human Body Model Per Machine Model 16 400 kV V Total Power Dissipation on FR−5 Board (Note 1) @ T A = 25°C ⎪ P D 150 mW Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Lead Solder Temperature − Maximum (10 Second Duration) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.62 in. See Application Note AND8308/D for further description of survivability specs. 12 PIN 1. CATHODE 2. ANODE Device Package Shipping † ORDERING INFORMATION ESD9XxxST5G SOD−923 (Pb−Free)8000/Tape & Reel MARKING DIAGRAM See specific marking information in the device marking column of the table on page 2 of this data sheet. DEVICE MARKING INFORMATION www. onsemi.com SOD−923 CASE 514AA †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.X = Specific Device Code M = Date Code X M SZESD9XxxST5G SOD−923 (Pb−Free)8000/Tape & Reel SCALE 8:1 ESD9X3.3ST5G Series, SZESD9X3.3ST5G Series www. onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ I PP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ V RWM VBR Breakdown Voltage @ I T IT Test Current IF Forward Current VF Forward Voltage @ I F Ppk Peak Power Dissipation C Max. Capacitance @V R = 0 and f = 1 MHz *See Application Note AND8308/D for detailed explanations of datasheet parameters. Uni−Directional IPP IF V I I RIT VRWM VCVBR VF ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, V F = 1.1 V Max. @ I F = 10 mA for all types) Device* Device Marking VRWM(V) IR (A) @ V RWM VBR (V) @ I T (Note 2) IT Max I PP (A) (Note 3) VC (V) @ Max I PP (Note 3) Ppk (W) (8 x 20 s) C (pF) VC Max Max Min mA Max Ty p Ty p Per IEC61000−4−2 (Note 4) ESD9X3.3ST5G A 3.3 2.5 5.0 1.0 9.8 10.4 102 80 Figures 1 and 2 (Note 5) ESD9X5.0ST5G B 5.0 1.0 6.2 1.0 8.7 12.3 107 65 ESD9X7.0ST5G 5** 7.0 0.1 7.5 1.0 4.0 25 100 65 ESD9X12ST5G C 12 1.0 13.5 1.0 5.9 23.7 140 30 * Include SZ-prefix devices where applicable. **Rotated 270 degrees. 2. V BR is measured with a pulse test current I T at an ambient temperature of 25°C. 3. Surge current waveform per Figure 5. 4. For test procedure see Figures 3 and 4 and Application Note AND8307/D. 5. ESD9X5.0ST5G shown below. Other voltages available upon request. Figure 1. ESD Clamping Voltage Screenshot Positive 8 kV contact per IEC 61000−4−2Figure 2. ESD Clamping Voltage Screenshot Negative 8 kV contact per IEC 61000−4−2 ESD9X3.3ST5G Series, SZESD9X3.3ST5G Series www. onsemi.com 3 IEC 61000−4−2 Spec. Level Test Voltage (kV) First Peak Current (A) Current at 30 ns (A) Current at 60 ns (A) 1 2 7.5 4 2 2 4 15 8 4 3 6 22.5 12 6 4 8 30 16 8 Ipeak 90% 10%IEC61000−4−2 Waveform 100% I @ 30 ns I @ 60 ns tP = 0.7 ns to 1 ns Figure 3. IEC61000−4−2 Spec Figure 4. Diagram of ESD Test Setup 50  Cable Device Under TestOscilloscope ESD Gun 50  The following is taken from Application Note AND8308/D − Interpretation of Datasheet Parameters for ESD Devices. ESD Voltage Clamping For sensitive circuit elements it is important to limit the voltage that an IC will be exposed to during an ESD event to as low a voltage as possible. The ESD clamping voltage is the voltage drop across the ESD protection diode during an ESD event per the IEC61000−4−2 waveform. Since the IEC61000−4−2 was written as a pass/fail spec for largersystems such as cell phones or laptop computers it is not clearly defined in the spec how to specify a clamping voltage at the device level. ON Semiconductor has developed a way to examine the entire voltage waveform across the ESD protection diode over the time domain of an ESD pulse in the form of an oscilloscope screenshot, which can be found on the datasheets for all ESD protection diodes. For more information on how ON Semiconductor creates these screenshots and how to interpret them please refer to AND8307/D. Figure 5. 8 x 20 s Pulse Waveform 100 90 80 70 60 50 40 30 20 10 0 020406080 t, TIME (s) % OF PEAK PULSE CURRENT tP tr PULSE WIDTH (t P) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 s PEAK VALUE I RSM @ 8 s HALF VALUE I RSM /2 @ 20 s ESD9X3.3ST5G Series, SZESD9X3.3ST5G Series www. onsemi.com 4 TYPICAL CHARACTERISTICS −55 + 25 7.4 Figure 6. Typical Breakdown Voltage versus Temperature TEMPERATURE (°C)+ 150 7.2 7.1 7.0 6.9 6.8 6.3 −55 20 Figure 7. Typical Leakage Current versus Temperature TEMPERATURE (°C) +25 16 12 8 4 0 BREAKDOWN VOLTAGE (VOLTS) (V Z @ I Z) I R (nA) 7.3 + 150 6.7 6.6 6.5 6.4 18 14 10 6 2 ESD9X3.3ST5G Series, SZESD9X3.3ST5G Series www. onsemi.com 5 PACKAGE DIMENSIONS SOD−923 CASE 514AA ISSUE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM MIN NOM MAXMILLIMETERSA0.34 0.39 0.43b0.15 0.20 0.25c0.07 0.12 0.17D0.75 0.80 0.85E0.55 0.60 0.65 0.95 1.00 1.05 L0.19 REFHE 0.013 0.015 0.0170.006 0.008 0.0100.003 0.005 0.0070.030 0.031 0.0330.022 0.024 0.0260.037 0.039 0.041 0.007 REF MIN NOM MAXINCHES D E b cA 2X −Y− −X− 0.08 XY HE DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SOLDERING FOOTPRINT* 2 1 2X BOTTOM VIEW L2 L2X TOP VIEW SIDE VIEW See Application Note AND8455/D for more mounting details L20.05 0.10 0.15 0.002 0.004 0.006 1.20 2X0.25 2X0.36 PACKAGE OUTLINE ESD9X3.3ST5G Series, SZESD9X3.3ST5G Series www. onsemi.com 6 SOD−923 CASE 514AA ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM MIN NOM MAXMILLIMETERSA0.34 0.39 0.43b0.15 0.20 0.25c0.07 0.12 0.17D0.75 0.80 0.85E0.55 0.60 0.65 0.95 1.00 1.05 L0.19 REFHE 0.013 0.015 0.0170.006 0.008 0.0100.003 0.005 0.0070.030 0.031 0.0330.022 0.024 0.0260.037 0.039 0.041 0.007 REF MIN NOM MAXINCHES D E b cA 2X −Y− −X− 0.08 XY HE DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SOLDERING FOOTPRINT* 2 1 STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE 2X BOTTOM VIEW L2 L2X TOP VIEW SIDE VIEW See Application Note AND8455/D for more mounting details L20.05 0.10 0.15 0.002 0.004 0.006 1.20 2X0.25 2X0.36 PACKAGE OUTLINE ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf . ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 ESD9X3.3ST5G/D LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.comON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative ◊ chipmall Electronics ON Semiconductor:   ESD9X12ST5G  ESD9X3.3ST5G  ESD9X5.0ST5G  ESD9X7.0ST5G  ESD9D5.0ST5G ESD9X7.0ST5G
Manufacturer,Configuration,Application,反向恢复时间(trr),Diode Type,Type of installation,Forward Voltage Drop,Reverse withstand voltage,Average rectified current,Reverse Recovery Time trr(Typ.),Ir - Reverse Current,总电容C,Junction capacitance value,Peak pulse current,Reverse Leakage Current(Max.),search for,Package,Peak pulse power,Reverse Stand-off Voltage VRWM,Type,最大安装高度,存储温度,二极管配置,品牌,原始制造商,原产国家,元件生命周期,Size,Direction(Uni,Bi),是否无铅,零件状态,反向漏电流 IR,钳位电压 VC,击穿电压 V(BR)-min,工作电压VR-VI(max),反向耐压VR(max),,Peak Pulse Current,Product Category,Shipping Restrictions,Pd - Power Dissipation,Compliance,Current Rating,Product Type,Polarity,Working Voltage,Number of Channels,Termination Style,Package / Case,Breakdown Voltage,Clamping Voltage,Pppm - Peak Pulse Power Dissipation,Vesd - Voltage ESD Air Gap,Vesd - Voltage ESD Contact,Cd - Diode Capacitance,Ipp - Peak Pulse Current,Minimum Operating Temperature,Operating Supply Voltage,Moisture Sensitive,Series,Part # Aliases,Subcategory,Vf - Forward Voltage,Unit Weight,Tradename,
ON Semiconductor,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,ESD Suppressors / TVS Diodes,,150 mW,,,ESD Suppressors,Unidirectional,7 V,1 Channel,SMD/SMT,SOD-923-2,7.5 V,25 V,100 W,30 kV,30 kV,65 pF,4 A,- 55 C,,,ESD9X,,TVS Diodes / ESD Suppression Diodes,,,,
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