ON Semiconductor MJD122T4G

Type,Current - Collector (Max),晶体管类型,Triode configuration,Manufacturer,Gain,Characteristic frequency,Collector Current,Package,characteristic,Package/Temperature,Input Compatibility,Output Clamp Diode,Drivers Per Package,V(BR)DSS(Max.),Maximum Turn-On Delay Time,Output Current,Vce饱和压降(Max),零件状态,是否无铅,品牌,原产国家,存储温度,元件生命周期,Type of installation,工作温度(Tj),集射极击穿电压Vce(Max),集电极电流Ic(Max),search for,Collector-Emitter Breakdown Voltage,Transistor Type,Product Category,Shipping Restrictions,Operating Temperature Range,Pd - Power Dissipation,Product Type,Package / Case,Collector- Base Voltage VCBO,Collector- Emitter Voltage VCEO Max,Emitter- Base Voltage VEBO,Minimum Operating Temperature,Gain Bandwidth Product fT,Moisture Sensitive,Series,Part # Aliases,Output Type,Continuous Collector Current,DC Collector/Base Gain hfe Min,DC Current Gain hFE Max,Transistor Polarity,Subcategory,Unit Weight,Tradename,