ON Semiconductor MJD122T4G

Type,Type of installation,Output Current,Maximum Turn-On Delay Time,V(BR)DSS(Max.),Drivers Per Package,Output Clamp Diode,Manufacturer,Input Compatibility,Package/Temperature,characteristic,Package,Collector Current,Characteristic frequency,Gain,Triode configuration,Current - Collector (Max),search for,Vce饱和压降(Max),集电极电流Ic(Max),集射极击穿电压Vce(Max),工作温度(Tj),Collector-Emitter Breakdown Voltage,Transistor Type,Product Category,Shipping Restrictions,Operating Temperature Range,Pd - Power Dissipation,Product Type,Package / Case,Collector- Base Voltage VCBO,Collector- Emitter Voltage VCEO Max,Emitter- Base Voltage VEBO,Minimum Operating Temperature,Gain Bandwidth Product fT,Moisture Sensitive,Series,Part # Aliases,Output Type,Continuous Collector Current,DC Collector/Base Gain hfe Min,DC Current Gain hFE Max,Transistor Polarity,Subcategory,Unit Weight,Tradename,