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ON Semiconductor / Fairchild FDT457N
Product Technical Specifications
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Manufacturer
ON Semiconductor
Product Category
MOSFET
RoHS
Type
MOSFET
Forward Transconductance - Min
5 S
Rds On - Drain-Source Resistance
60 mOhms
Rise Time
12 ns
Fall Time
3 ns
Mounting Style
SMD/SMT
Pd - Power Dissipation
3 W
Product Type
MOSFET
Number Of Channels
1 Channel
Package / Case
SOT-223-4
Length
6.5 mm
Width
3.5 mm
Height
1.8 mm
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
Channel Mode
Enhancement
Series
FDT457N
Packaging
Cut Tape or Reel
Part # Aliases
FDT457N_NL
Brand
ON Semiconductor / Fairchild
Configuration
Single
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Vgs - Gate-Source Voltage
20 V
Technology
Si
Id - Continuous Drain Current
5 A
Vds - Drain-Source Breakdown Voltage
30 V
Typical Turn-Off Delay Time
12 ns
Typical Turn-On Delay Time
5 ns
Factory Pack Quantity
4000
Subcategory
MOSFETs
Unit Weight
0.003951 oz
In Stock 5 Ship within 1 day
BUY
QUOTE
Total
$1.05683
Free shipping & handling on orders $199+. (Within 2kg)
Quantity
Unit Price
1+
$1.05683
10+
$0.77939
30+
$0.72814
100+
$0.67689
500+
$0.65395
1000+
$0.64327
Manufacturer,search for,Continuous Drain Current (Id) @ 25°C,Power Dissipation-Max (Ta=25°C),Current - Continuous Drain (Id) @ 25°C,Driven Configuration,Features,Gate Type,Logic Voltage - VIL, VIH,Current - Peak Output (Source, Sink),High Side Voltage - Max (Bootstrap),Channel Type,Package,Drain-source breakdown voltage,On Resistance - Max,Drain current,FET configuration,Operating Supply Voltage,Number of Drivers,Maximum DC Collector Current,Input Type,Collector-Emitter Breakdown Voltage,,Product Category,Shipping Restrictions,Type,Product,Forward Transconductance - Min,Rds On - Drain-Source Resistance,Rise Time,Fall Time,Pd - Power Dissipation,Compliance,Product Type,Number of Channels,Termination Style,Package / Case,Minimum Operating Temperature,Moisture Sensitive,Series,Part # Aliases,Transistor Polarity,Transistor Type,Vgs - Gate-Source Voltage,Vgs th - Gate-Source Threshold Voltage,Qg - Gate Charge,Technology,Id - Continuous Drain Current,Vds - Drain-Source Breakdown Voltage,Typical Turn-Off Delay Time,Typical Turn-On Delay Time,Subcategory,Unit Weight,Tradename,
ON Semiconductor,,,,,,,,,,,,,,,,,,,,,,,MOSFET,,MOSFET,,5 S,60 mOhms,12 ns,3 ns,3 W,,MOSFET,1 Channel,,SOT-223-4,- 65 C,,FDT457N,FDT457N_NL,N-Channel,1 N-Channel,20 V,,,Si,5 A,30 V,12 ns,5 ns,MOSFETs,0.003951 oz,,
728677
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=728677&N=
$
1
1.05683
10
0.77939
30
0.72814
100
0.67689
500
0.65395
1000
0.64327
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