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                                FDT457N
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                                                                    Semiconductors
                                                                    Discrete Semiconductors
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                                                                    MOSFET

ON Semiconductor / Fairchild FDT457N

Manufacturer:

ON Semiconductor / Fairchild

Mfr.Part #:

FDT457N

Package:

SOT-223-4

RoHS:
Datasheet:

FDT457N

Description:

MOSFET SOT-223 N-CH 30V

Lead Time:

10 Weeks

Product Technical Specifications

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Product Attribute Attribute Value Search Similar
Manufacturer ON Semiconductor
Product Category MOSFET
RoHS
Type MOSFET
Forward Transconductance - Min 5 S
Rds On - Drain-Source Resistance 60 mOhms
Rise Time 12 ns
Fall Time 3 ns
Mounting Style SMD/SMT
Pd - Power Dissipation 3 W
Product Type MOSFET
Number Of Channels 1 Channel
Package / Case SOT-223-4
Length 6.5 mm
Width 3.5 mm
Height 1.8 mm
Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 150 C
Channel Mode Enhancement
Series FDT457N
Packaging Cut Tape or Reel
Part # Aliases FDT457N_NL
Brand ON Semiconductor / Fairchild
Configuration Single
Transistor Polarity N-Channel
Transistor Type 1 N-Channel
Vgs - Gate-Source Voltage 20 V
Technology Si
Id - Continuous Drain Current 5 A
Vds - Drain-Source Breakdown Voltage 30 V
Typical Turn-Off Delay Time 12 ns
Typical Turn-On Delay Time 5 ns
Factory Pack Quantity 4000
Subcategory MOSFETs
Unit Weight 0.003951 oz
Comments ( 0 )
No comments received~
Manufacturer,search for,Continuous Drain Current (Id) @ 25°C,Power Dissipation-Max (Ta=25°C),Current - Continuous Drain (Id) @ 25°C,Driven Configuration,Features,Gate Type,Logic Voltage - VIL, VIH,Current - Peak Output (Source, Sink),High Side Voltage - Max (Bootstrap),Channel Type,Package,Drain-source breakdown voltage,On Resistance - Max,Drain current,FET configuration,Operating Supply Voltage,Number of Drivers,Maximum DC Collector Current,Input Type,Collector-Emitter Breakdown Voltage,,Product Category,Shipping Restrictions,Type,Product,Forward Transconductance - Min,Rds On - Drain-Source Resistance,Rise Time,Fall Time,Pd - Power Dissipation,Compliance,Product Type,Number of Channels,Termination Style,Package / Case,Minimum Operating Temperature,Moisture Sensitive,Series,Part # Aliases,Transistor Polarity,Transistor Type,Vgs - Gate-Source Voltage,Vgs th - Gate-Source Threshold Voltage,Qg - Gate Charge,Technology,Id - Continuous Drain Current,Vds - Drain-Source Breakdown Voltage,Typical Turn-Off Delay Time,Typical Turn-On Delay Time,Subcategory,Unit Weight,Tradename,
ON Semiconductor,,,,,,,,,,,,,,,,,,,,,,,MOSFET,,MOSFET,,5 S,60 mOhms,12 ns,3 ns,3 W,,MOSFET,1 Channel,,SOT-223-4,- 65 C,,FDT457N,FDT457N_NL,N-Channel,1 N-Channel,20 V,,,Si,5 A,30 V,12 ns,5 ns,MOSFETs,0.003951 oz,,
728677
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=728677&N=
$
1 1.05683
10 0.77939
30 0.72814
100 0.67689
500 0.65395
1000 0.64327
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