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                                FDS6574A
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                                                                    Semiconductors
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                                                                    MOSFET

ON Semiconductor / Fairchild FDS6574A

Manufacturer:

ON Semiconductor / Fairchild

Mfr.Part #:

FDS6574A

Package:

SO-8

RoHS:
Datasheet:

FDS6574A

Description:

MOSFET SO-8

Product Technical Specifications

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Product Attribute Attribute Value Search Similar
Manufacturer ON Semiconductor
Product Category MOSFET
RoHS
Type MOSFET
Forward Transconductance - Min 115 S
Rds On - Drain-Source Resistance 6 mOhms
Rise Time 22 ns
Fall Time 82 ns
Mounting Style SMD/SMT
Pd - Power Dissipation 2.5 W
Product Type MOSFET
Number Of Channels 1 Channel
Package / Case SO-8
Length 4.9 mm
Width 3.9 mm
Height 1.75 mm
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Channel Mode Enhancement
Series FDS6574A
Packaging Cut Tape or Reel
Part # Aliases FDS6574A_NL
Brand ON Semiconductor / Fairchild
Configuration Single
Transistor Polarity N-Channel
Transistor Type 1 N-Channel
Vgs - Gate-Source Voltage 8 V
Technology Si
Id - Continuous Drain Current 16 A
Vds - Drain-Source Breakdown Voltage 20 V
Typical Turn-Off Delay Time 173 ns
Typical Turn-On Delay Time 19.5 ns
Factory Pack Quantity 2500
Subcategory MOSFETs
Unit Weight 0.004586 oz
Tradename PowerTrench
Comments ( 0 )
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Manufacturer,Gate Type,栅极电荷(Qg)(Max),连续漏极电流Id@25℃,FET类型,工作温度(Tj),Type of installation,功率(Max),Continuous Drain Current (Id) @ 25°C,Power Dissipation-Max (Ta=25°C),Current - Continuous Drain (Id) @ 25°C,Driven Configuration,Features,Package/Temperature,Logic Voltage - VIL, VIH,Current - Peak Output (Source, Sink),High Side Voltage - Max (Bootstrap),Channel Type,FET configuration,Drain-source breakdown voltage,Drain current,On Resistance - Max,Package,search for,漏极电流Id(连续)(Max),导通电阻Rds On(Max),IC(Max.)(A),VCE(sat)(Typ.),漏源电压(Vdss),Pt,VCES,输入电容(Ciss)(Max),Operating Supply Voltage,Number of Drivers,Maximum DC Collector Current,Input Type,Collector-Emitter Breakdown Voltage,,Product Category,Shipping Restrictions,Type,Product,Forward Transconductance - Min,Rds On - Drain-Source Resistance,Rise Time,Fall Time,Pd - Power Dissipation,Compliance,Product Type,Number of Channels,Termination Style,Package / Case,Minimum Operating Temperature,Moisture Sensitive,Series,Part # Aliases,Transistor Polarity,Transistor Type,Vgs - Gate-Source Voltage,Vgs th - Gate-Source Threshold Voltage,Qg - Gate Charge,Technology,Id - Continuous Drain Current,Vds - Drain-Source Breakdown Voltage,Typical Turn-Off Delay Time,Typical Turn-On Delay Time,Subcategory,Unit Weight,Tradename,
ON Semiconductor,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,MOSFET,,MOSFET,,115 S,6 mOhms,22 ns,82 ns,2.5 W,,MOSFET,1 Channel,,SO-8,- 55 C,,FDS6574A,FDS6574A_NL,N-Channel,1 N-Channel,8 V,,,Si,16 A,20 V,173 ns,19.5 ns,MOSFETs,0.004586 oz,PowerTrench,
738278
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=738278&N=
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