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FDN337N

ON Semiconductor / Fairchild FDN337N

Manufacturer:

ON Semiconductor / Fairchild

Mfr.Part #:

FDN337N

Package:

SSOT-3

RoHS:
Datasheet:

FDN337N

Description:

MOSFET SSOT-3 N-CH 30V

Lead Time:

4 Weeks

Product Technical Specifications

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Product Attribute Attribute Value Search Similar
Manufacturer ON Semiconductor
Product Category MOSFET
RoHS
Type FET
Product MOSFET Small Signal
Forward Transconductance - Min 13 S
Rds On - Drain-Source Resistance 65 mOhms
Rise Time 10 ns
Fall Time 10 ns
Mounting Style SMD/SMT
Pd - Power Dissipation 500 mW (1/2 W)
Product Type MOSFET
Number of Channels 1 Channel
Package / Case SSOT-3
Length 2.9 mm
Width 1.4 mm
Height 1.12 mm
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Channel Mode Enhancement
Series FDN337N
Packaging Cut Tape or Reel
Part # Aliases FDN337N_NL
Brand ON Semiconductor / Fairchild
Configuration Single
Transistor Polarity N-Channel
Transistor Type 1 N-Channel
Vgs - Gate-Source Voltage 8 V
Technology Si
Id - Continuous Drain Current 2.2 A
Vds - Drain-Source Breakdown Voltage 30 V
Typical Turn-Off Delay Time 17 ns
Typical Turn-On Delay Time 4 ns
Factory Pack Quantity 3000
Subcategory MOSFETs
Unit Weight 0.001270 oz
Comments ( 0 )
No comments received~
Manufacturer,Continuous Drain Current (Id) @ 25°C,Power Dissipation-Max (Ta=25°C),Current - Continuous Drain (Id) @ 25°C,High Side Voltage - Max (Bootstrap),Driven Configuration,Features,Gate Type,Current - Peak Output (Source, Sink),Logic Voltage - VIL, VIH,Operating Supply Voltage,Number of Drivers,Maximum DC Collector Current,Input Type,Collector-Emitter Breakdown Voltage,,Product Category,Shipping Restrictions,Type,Product,Forward Transconductance - Min,Rds On - Drain-Source Resistance,Rise Time,Fall Time,Pd - Power Dissipation,Compliance,Product Type,Number of Channels,Termination Style,Package / Case,Minimum Operating Temperature,Moisture Sensitive,Series,Part # Aliases,Transistor Polarity,Transistor Type,Vgs - Gate-Source Voltage,Vgs th - Gate-Source Threshold Voltage,Qg - Gate Charge,Technology,Id - Continuous Drain Current,Vds - Drain-Source Breakdown Voltage,Typical Turn-Off Delay Time,Typical Turn-On Delay Time,Subcategory,Unit Weight,Tradename,
ON Semiconductor,,,,,,,,,,,,,,,,MOSFET,,FET,MOSFET Small Signal,13 S,65 mOhms,10 ns,10 ns,500 mW (1/2 W),,MOSFET,1 Channel,,SSOT-3,- 55 C,,FDN337N,FDN337N_NL,N-Channel,1 N-Channel,8 V,,,Si,2.2 A,30 V,17 ns,4 ns,MOSFETs,0.001270 oz,,
726088
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=726088&N=
$
1 0.15146
10 0.11452
30 0.10775
100 0.10096
500 0.09795
1000 0.09646
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