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                                FCH077N65F-F155
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ON Semiconductor / Fairchild FCH077N65F-F155

Manufacturer:

ON Semiconductor / Fairchild

Mfr.Part #:

FCH077N65F-F155

Package:

TO-247-3

RoHS:
Datasheet:

FCH077N65F-F155

Description:

MOSFET SuperFET2 650V, 77 mOhm, FRFET

ECAD Model:
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Product Technical Specifications

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Product Attribute Attribute Value Search Similar
Manufacturer ON Semiconductor
Product Category MOSFET
RoHS
Forward Transconductance - Min 42 S
Rds On - Drain-Source Resistance 68 mOhms
Rise Time 35 ns
Fall Time 5 ns
Mounting Style Through Hole
Pd - Power Dissipation 481 W
Product Type MOSFET
Number Of Channels 1 Channel
Package / Case TO-247-3
Length 15.87 mm
Width 4.82 mm
Height 20.82 mm
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Series FCH077N65F
Packaging Tube
Part # Aliases FCH077N65F_F155
Brand ON Semiconductor / Fairchild
Configuration Single
Transistor Polarity N-Channel
Transistor Type 1 N-Channel
Vgs - Gate-Source Voltage 30 V
Vgs Th - Gate-Source Threshold Voltage 5 V
Qg - Gate Charge 126 nC
Technology Si
Id - Continuous Drain Current 54 A
Vds - Drain-Source Breakdown Voltage 650 V
Typical Turn-Off Delay Time 113 ns
Typical Turn-On Delay Time 40 ns
Factory Pack Quantity 450
Subcategory MOSFETs
Unit Weight 0.225401 oz
Tradename SuperFET II
Manufacturer,Drain-source breakdown voltage,FET类型,工作温度(Tj),Type of installation,功率(Max),漏极电流Id(连续)(Max),search for,Package,On Resistance - Max,Drain current,连续漏极电流Id@25℃,FET configuration,Channel Type,High Side Voltage - Max (Bootstrap),Current - Peak Output (Source, Sink),Logic Voltage - VIL, VIH,Gate Type,Features,Driven Configuration,Current - Continuous Drain (Id) @ 25°C,Continuous Drain Current (Id) @ 25°C,漏极电流Idss,品牌,原产国家,引线数量,不同 Id,Vgs时的 RdsOn(最大值),零件状态,是否无铅,存储温度,元件生命周期,漏源极电压(Vdss),Power Dissipation-Max (Ta=25°C),Package/Temperature,Pt,VCES,VCE(sat)(Typ.),IC(Max.)(A),导通电阻Rds On(Max),漏源电压(Vdss),输入电容(Ciss)(Max),栅极电荷(Qg)(Max),Operating Supply Voltage,Number of Drivers,Maximum DC Collector Current,Input Type,Collector-Emitter Breakdown Voltage,,Product Category,Shipping Restrictions,Type,Product,Forward Transconductance - Min,Rds On - Drain-Source Resistance,Rise Time,Fall Time,Pd - Power Dissipation,Compliance,Product Type,Number of Channels,Termination Style,Package / Case,Minimum Operating Temperature,Moisture Sensitive,Series,Part # Aliases,Transistor Polarity,Transistor Type,Vgs - Gate-Source Voltage,Vgs th - Gate-Source Threshold Voltage,Qg - Gate Charge,Technology,Id - Continuous Drain Current,Vds - Drain-Source Breakdown Voltage,Typical Turn-Off Delay Time,Typical Turn-On Delay Time,Subcategory,Unit Weight,Tradename,
ON Semiconductor,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,MOSFET,,,,42 S,68 mOhms,35 ns,5 ns,481 W,,MOSFET,1 Channel,,TO-247-3,- 55 C,,FCH077N65F,FCH077N65F_F155,N-Channel,1 N-Channel,30 V,5 V,126 nC,Si,54 A,650 V,113 ns,40 ns,MOSFETs,0.225401 oz,SuperFET II,
759868
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=759868&N=
$
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