Infineon Technologies IRLML6401TRPBF

Manufacturer,Drain-source breakdown voltage,VCE(sat)(Typ.),IC(Max.)(A),导通电阻Rds On(Max),Continuous Drain Current (Id) @ 25°C,Power Dissipation-Max (Ta=25°C),Current - Continuous Drain (Id) @ 25°C,Driven Configuration,Features,Gate Type,Logic Voltage - VIL, VIH,Current - Peak Output (Source, Sink),High Side Voltage - Max (Bootstrap),Channel Type,FET configuration,不同 Id，Vgs时的 RdsOn（最大值）,Drain current,On Resistance - Max,Package,search for,漏极电流Id(连续)(Max),功率(Max),Type of installation,工作温度(Tj),FET类型,连续漏极电流Id@25℃,栅极电荷(Qg)(Max),输入电容(Ciss)(Max),漏源电压(Vdss),漏极电流Idss,VCES,存储温度,是否无铅,元件生命周期,漏源极电压（Vdss）,Package/Temperature,零件状态,Pt,Operating Supply Voltage,Number of Drivers,Maximum DC Collector Current,Input Type,Collector-Emitter Breakdown Voltage,,Product Category,Shipping Restrictions,Type,Product,Forward Transconductance - Min,Rds On - Drain-Source Resistance,Rise Time,Fall Time,Pd - Power Dissipation,Compliance,Product Type,Number of Channels,Termination Style,Package / Case,Minimum Operating Temperature,Moisture Sensitive,Series,Part # Aliases,Transistor Polarity,Transistor Type,Vgs - Gate-Source Voltage,Vgs th - Gate-Source Threshold Voltage,Qg - Gate Charge,Technology,Id - Continuous Drain Current,Vds - Drain-Source Breakdown Voltage,Typical Turn-Off Delay Time,Typical Turn-On Delay Time,Subcategory,Unit Weight,Tradename,