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                                IPA90R800C3
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Infineon Technologies IPA90R800C3

Manufacturer:

Infineon Technologies

Mfr.Part #:

IPA90R800C3

Package:

TO-220FP-3

RoHS:
Datasheet:

IPA90R800C3

Description:

MOSFET N-Ch 900V 6.9A TO220FP-3 CoolMOS C3

ECAD Model:

Product Technical Specifications

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Product Attribute Attribute Value Search Similar
Manufacturer Infineon
Product Category MOSFET
RoHS
Rds On - Drain-Source Resistance 800 mOhms
Rise Time 20 ns
Fall Time 32 ns
Mounting Style Through Hole
Pd - Power Dissipation 33 W
Product Type MOSFET
Number Of Channels 1 Channel
Package / Case TO-220FP-3
Length 10.65 mm
Width 4.85 mm
Height 16.15 mm
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Channel Mode Enhancement
Series CoolMOS C3
Packaging Tube
Part # Aliases IPA90R800C3XKSA1 IPA9R8C3XK SP000413718
Brand Infineon Technologies
Configuration Single
Transistor Polarity N-Channel
Transistor Type 1 N-Channel
Vgs - Gate-Source Voltage 20 V
Qg - Gate Charge 42 nC
Technology Si
Id - Continuous Drain Current 6.9 A
Vds - Drain-Source Breakdown Voltage 900 V
Typical Turn-Off Delay Time 400 ns
Typical Turn-On Delay Time 70 ns
Factory Pack Quantity 500
Subcategory MOSFETs
Unit Weight 0.211644 oz
Tradename CoolMOS
Comments ( 0 )
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Manufacturer,Drain-source breakdown voltage,VCE(sat)(Typ.),IC(Max.)(A),导通电阻Rds On(Max),Continuous Drain Current (Id) @ 25°C,Power Dissipation-Max (Ta=25°C),Current - Continuous Drain (Id) @ 25°C,Driven Configuration,Features,Gate Type,Logic Voltage - VIL, VIH,Current - Peak Output (Source, Sink),High Side Voltage - Max (Bootstrap),Channel Type,FET configuration,不同 Id,Vgs时的 RdsOn(最大值),Drain current,On Resistance - Max,Package,search for,漏极电流Id(连续)(Max),功率(Max),Type of installation,工作温度(Tj),FET类型,连续漏极电流Id@25℃,栅极电荷(Qg)(Max),输入电容(Ciss)(Max),漏源电压(Vdss),漏极电流Idss,VCES,存储温度,是否无铅,元件生命周期,漏源极电压(Vdss),Package/Temperature,零件状态,Pt,Operating Supply Voltage,Number of Drivers,Maximum DC Collector Current,Input Type,Collector-Emitter Breakdown Voltage,,Product Category,Shipping Restrictions,Type,Product,Forward Transconductance - Min,Rds On - Drain-Source Resistance,Rise Time,Fall Time,Pd - Power Dissipation,Compliance,Product Type,Number of Channels,Termination Style,Package / Case,Minimum Operating Temperature,Moisture Sensitive,Series,Part # Aliases,Transistor Polarity,Transistor Type,Vgs - Gate-Source Voltage,Vgs th - Gate-Source Threshold Voltage,Qg - Gate Charge,Technology,Id - Continuous Drain Current,Vds - Drain-Source Breakdown Voltage,Typical Turn-Off Delay Time,Typical Turn-On Delay Time,Subcategory,Unit Weight,Tradename,
Infineon,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,MOSFET,,,,,800 mOhms,20 ns,32 ns,33 W,,MOSFET,1 Channel,,TO-220FP-3,- 55 C,,CoolMOS C3,IPA90R800C3XKSA1 IPA9R8C3XK SP000413718,N-Channel,1 N-Channel,20 V,,42 nC,Si,6.9 A,900 V,400 ns,70 ns,MOSFETs,0.211644 oz,CoolMOS,
787780
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=787780&N=
$
1 5.67314
10 4.72098
30 4.03073
100 3.46148
500 3.36424
1000 3.31661
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