Product Technical Specifications
0 products found. Show Similar
| Product Attribute | Attribute Value | Search Similar | |
|---|---|---|---|
| Manufacturer | Infineon |
|
|
| Product Category | MOSFET |
|
|
| RoHS | |||
| Forward Transconductance - Min | 65 mS |
|
|
| Rds On - Drain-Source Resistance | 5.8 Ohms |
|
|
| Rise Time | 16.2 ns |
|
|
| Fall Time | 20.5 ns |
|
|
| Mounting Style | SMD/SMT | ||
| Pd - Power Dissipation | 360 mW |
|
|
| Product Type | MOSFET |
|
|
| Number Of Channels | 1 Channel |
|
|
| Package / Case | SOT-23-3 |
|
|
| Length | 2.9 mm | ||
| Width | 1.3 mm | ||
| Height | 1.1 mm | ||
| Minimum Operating Temperature | - 55 C |
|
|
| Maximum Operating Temperature | + 150 C | ||
| Channel Mode | Enhancement | ||
| Series | BSS84 |
|
|
| Packaging | Cut Tape or Reel | ||
| Part # Aliases | BSS84P BSS84PH6327XT H6327 SP000929186 |
|
|
| Brand | Infineon Technologies | ||
| Configuration | Single | ||
| Transistor Polarity | P-Channel |
|
|
| Transistor Type | 1 P-Channel |
|
|
| Vgs - Gate-Source Voltage | 20 V |
|
|
| Vgs Th - Gate-Source Threshold Voltage | 2 V |
|
|
| Qg - Gate Charge | 1.5 nC |
|
|
| Technology | Si |
|
|
| Id - Continuous Drain Current | 170 mA |
|
|
| Vds - Drain-Source Breakdown Voltage | 60 V |
|
|
| Typical Turn-Off Delay Time | 8.6 ns |
|
|
| Typical Turn-On Delay Time | 6.7 ns |
|
|
| Factory Pack Quantity | 3000 | ||
| Subcategory | MOSFETs |
|
|
| Unit Weight | 0.000282 oz |
|
No comments received~
