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                                FF650R17IE4
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                                                                    Semiconductors
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                                                                    IGBT Modules

Infineon Technologies FF650R17IE4

Manufacturer:

Infineon Technologies

Mfr.Part #:

FF650R17IE4

Package:

PRIME2

RoHS:
Datasheet:

FF650R17IE4

Description:

IGBT Modules N-CH 1.7KV 930A

Product Technical Specifications

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Manufacturer Infineon
Product Category IGBT Modules
Product IGBT Silicon Modules
Maximum Gate Emitter Voltage 20 V
Mounting Style Chassis Mount
Pd - Power Dissipation 4.15 kW
Product Type IGBT Modules
Package / Case PRIME2
Collector- Emitter Voltage VCEO Max 1700 V
Collector-Emitter Saturation Voltage 2.45 V
Length 172 mm
Width 89 mm
Height 38 mm
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 150 C
Packaging Tray
Part # Aliases FF650R17IE4BOSA1 SP000614664
Brand Infineon Technologies
Configuration Dual
Continuous Collector Current At 25 C 930 A
Gate-Emitter Leakage Current 400 nA
Technology Si
Factory Pack Quantity 3
Subcategory IGBTs
Unit Weight 1.872 lbs
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Cross References

Manufacturer,Product Category,Shipping Restrictions,Product,Operating Temperature Range,Pd - Power Dissipation,Product Type,Package / Case,Collector- Emitter Voltage VCEO Max,Collector-Emitter Saturation Voltage,Minimum Operating Temperature,Moisture Sensitive,Series,Part # Aliases,Continuous Collector Current at 25 C,Gate-Emitter Leakage Current,Technology,Subcategory,Unit Weight,Tradename,
Infineon,IGBT Modules,,IGBT Silicon Modules,,4.15 kW,IGBT Modules,PRIME2,1700 V,2.45 V,- 40 C,,,FF650R17IE4BOSA1 SP000614664,930 A,400 nA,Si,IGBTs,1.872 lbs,,
726248
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