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                                IXTQ460P2
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IXYS IXTQ460P2

Manufacturer:

IXYS

Mfr.Part #:

IXTQ460P2

Package:

TO-3P-3

RoHS:
Datasheet:

IXTQ460P2

Description:

MOSFET PolarP2 Power MOSFET

ECAD Model:
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Product Technical Specifications

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Manufacturer IXYS
Product Category MOSFET
RoHS
Type PolarP2 Power MOSFET
Rds On - Drain-Source Resistance 270 mOhms
Mounting Style Through Hole
Pd - Power Dissipation 480 W
Product Type MOSFET
Number Of Channels 1 Channel
Package / Case TO-3P-3
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Series IXTQ460
Packaging Tube
Brand IXYS
Configuration Single
Transistor Polarity N-Channel
Transistor Type 1 N-Channel
Vgs - Gate-Source Voltage 30 V
Technology Si
Id - Continuous Drain Current 24 A
Vds - Drain-Source Breakdown Voltage 500 V
Factory Pack Quantity 30
Subcategory MOSFETs
Unit Weight 0.194007 oz
Tradename Polar2 HiPerFET
Manufacturer,Drain-source breakdown voltage,FET类型,工作温度(Tj),Type of installation,功率(Max),漏极电流Id(连续)(Max),search for,Package,On Resistance - Max,Drain current,连续漏极电流Id@25℃,FET configuration,Channel Type,High Side Voltage - Max (Bootstrap),Current - Peak Output (Source, Sink),Logic Voltage - VIL, VIH,Gate Type,Features,Driven Configuration,Current - Continuous Drain (Id) @ 25°C,Continuous Drain Current (Id) @ 25°C,漏极电流Idss,品牌,原产国家,引线数量,不同 Id,Vgs时的 RdsOn(最大值),零件状态,是否无铅,存储温度,元件生命周期,漏源极电压(Vdss),Power Dissipation-Max (Ta=25°C),Package/Temperature,Pt,VCES,VCE(sat)(Typ.),IC(Max.)(A),导通电阻Rds On(Max),漏源电压(Vdss),输入电容(Ciss)(Max),栅极电荷(Qg)(Max),Operating Supply Voltage,Number of Drivers,Maximum DC Collector Current,Input Type,Collector-Emitter Breakdown Voltage,,Product Category,Shipping Restrictions,Type,Product,Forward Transconductance - Min,Rds On - Drain-Source Resistance,Rise Time,Fall Time,Pd - Power Dissipation,Compliance,Product Type,Number of Channels,Termination Style,Package / Case,Minimum Operating Temperature,Moisture Sensitive,Series,Part # Aliases,Transistor Polarity,Transistor Type,Vgs - Gate-Source Voltage,Vgs th - Gate-Source Threshold Voltage,Qg - Gate Charge,Technology,Id - Continuous Drain Current,Vds - Drain-Source Breakdown Voltage,Typical Turn-Off Delay Time,Typical Turn-On Delay Time,Subcategory,Unit Weight,Tradename,
IXYS,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,MOSFET,,PolarP2 Power MOSFET,,,270 mOhms,,,480 W,,MOSFET,1 Channel,,TO-3P-3,- 55 C,,IXTQ460,,N-Channel,1 N-Channel,30 V,,,Si,24 A,500 V,,,MOSFETs,0.194007 oz,Polar2 HiPerFET,
768855
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=768855&N=
$
1 4.84750
10 4.26530
30 3.91850
100 3.56850
500 3.40620
1000 3.33460
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