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SiGe rectifiers offer cutting-edge high efficiency and space-savings

electropages | Nexperia | 11/05/2021

Nexperia has released a range of new SiGe rectifiers with 120V, 150V, and 200V reverse voltages that consolidate the high efficiency of its Schottky counterparts with the thermal stability of fast recovery diodes.

 

Aimed at automotive, communications infrastructure and server markets, the new 1-3A SiGe rectifiers are of special benefit in high-temperature applications like LED lighting, engine control units or fuel injection. Design engineers utilising the new, notably low leakage devices can now rely on an expansive safe-operating area with no thermal runaway up to 175 degrees. At the same time, they can optimise their design for higher efficiency, which is not feasible employing fast recovery diodes generally utilised in such high-temperature designs. By boosting a low forward voltage (Vf) and low Qrr, the SiGe rectifiers offer an advantage of 10-20% lower conduction losses.

Nexperia

The PMEG SiGe devices (PMEGxGxELR/P) are housed in size and thermally-efficient CFP3 and CFP5 packages. By providing a solid copper clip, the packages’ thermal resistance is decreased, and transfer of heat into the ambient environment is optimised, enabling small and compact PCB designs. Furthermore, simple pin-to-pin replacements of Schottky and fast recovery diodes are achievable when switching to SiGe technology.

 

Jan Fischer, Nexperia product manager, commented: “Utilising Nexperia’s innovative Silicon Germanium technology gives engineers unprecedented options to design their power circuitry and finally build market-leading products. SiGe perfectly complements Nexperia’s power diodes offering which includes more than 100 Schottky and fast recovery rectifiers in the clip-bonded FlatPower (CFP) package. And, we continue to grow this portfolio to always offer our customers a part which is the ideal fit for their application."

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