Samsung was the first company in the world to implement the process of computing in MRAM.

Samsung has done what no other company has done. The Koreans were the first in the world to implement the process of computing in MRAM.

Magnetoresistive RAM can replace conventional dynamic memory with many advantages. However, when it comes to computing directly in memory, a number of problems arise.

As pointed out in a scientific paper by scientists from Samsung, the development of a magnetoresistive random access memory array with spin momentum transfer remains a very laborious task, despite the practical advantages of this new technology. The difficulty is due to the low resistance of the MRAM, which would result in high power consumption in a conventional die array using current summation for analog multiply-accumulate operations. The company has been able to create a 64x64 jumper array based on MRAM cells that can overcome the low resistance problem with an architecture that uses resistance summation for analog multiply-accumulate operations. This array is integrated with readout electronics based on 28nm CMOS technology. With this array, a two-level perceptron was implemented to classify 10,000 handwritten digits with 93.23% accuracy. When emulating a deeper eight-layer Visual Geometry Group-8 neural network with measured errors, the classification accuracy increases to 98.86%. Samsung also used an array to implement one layer in a ten-layer neural network, and a high accuracy of 93.4% was achieved in the face recognition task.

Samsung's development  could allow these MRAM computations to be used to create AI, including as a brain simulation platform by mimicking synaptic connections.