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SCT040H65G3AG. New products from STMicroelectronics

10/12/2021

SCT040H65G3AG

STMicroelectronics has released the third generation of 650V silicon carbide MOSFETs - SCT040H65G3AG, designed for power transmissions of electric vehicles, which is currently relevant and timely.

The new product is called SCT040H65G3AG, has an on-resistance of 40 mΩ and can withstand currents up to 30 A

For gate driving, the recommended operating range is -5 to 18 V, with absolute maximum values ​​of -10 to 22 V, and a specific gate transient value is useful: 10 hours of -11 or 25 V submicrosecond pulses accumulated over the life of the product.

Available devices with rated voltages of 650 V, 750 V, and 1200 V will include AC mains and high voltage car batteries, including 800 V types.

Initially, the SCT040H65G3AG SiC 650V MOSFET is intended for evaluation use with a limited number of available devices. According to STMicroelectronics, it has completed the implementation of its new 3rd generation SiC technology platform and plans to commercialize most of these products by the end of 2021.

SCT040H65G3AG

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