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P-channel MOSFET offers high efficiency and power density

electropages | Vishay | 19/08/2020

Vishay Intertechnology has introduced what is claimed to be the first-ever -30V p-channel power MOSFET to offer on-resistance of 1.7mOhm at 10V. With its industry-low on-resistance and 6.15mm x 5.15mm thermally enhanced PowerPAK SO-8 single package, the Vishay Siliconix TrenchFET Gen IV SiRA99DP is purpose-built to improve power density.

 

The low on-resistance of the MOSFET claims to represent a reduction of 43% compared to the next best product on the market, and reduces voltage drops and minimises conduction power losses to allow higher power density. Combining this low RDS(ON) with an ultra-low gate charge of 84nC, the device provides best in class gate charge times on-resistance, a critical FOM for MOSFETs employed in switching applications, of 185mOhm*nC

Vishay

Excellent for circuits with a 12V input, the device is optimised for adapter, battery, and general-purpose power switches; reverse-polarity battery protection; OR-ing functionality; and motor drive control in servers, telecom equipment, and industrial PCs and robots. The device's increased power density saves PCB space in these applications by decreasing the quantity of components required in parallel — in other words, by giving more current per individual device. Also, as a p-channel MOSFET, the device does not need a charge pump to give the positive gate bias required by its n-channel counterparts.

 

The MOSFET is 100 % RG and UIS-tested, RoHS-compliant, and halogen-free.

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